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BG3230_BG3230R
DUAL N-Channel MOSFET Tetrode
4 5 6
* Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage * Two AGC amplifiers in one single package * Integrated stabilized bias network * Integrated gate protection diodes * High gain, low noise figure * Improved cross modulation at gain reduction * High AGC-range BG3230
6 5 4
2 1
3
VPS05604
BG3230R
6 5 4
Drain AGC HF Input G2 G1
HF Output + DC
B A B
2 3 1 1
A
GND
2 3
EHA07215
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking
BG3230 BG3230R
SOT363 SOT363
1=G1 1=G1
2=G2 2=S
3=D 3=D
4=D 4=D
5=S 5=G2
6=G1 6=G1
KBs KIs
180 rotated tape loading orientation available
Maximum Ratings Parameter Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1/ gate 2-source voltage Total power dissipation Storage temperature Channel temperature Thermal Resistance Parameter Channel - soldering point1) Symbol
Rthchs
Symbol VDS ID IG1/2SM V G1/G2S Ptot Tstg Tch
Value 8 25 1 6 160 -55 ... 150 150
Unit V mA V mW C
Value
280
Unit K/W
1For calculation of R thJA please refer to Application Note Thermal Resistance
1
Feb-27-2004
BG3230_BG3230R
Electrical Characteristics Parameter DC Characteristics Drain-source breakdown voltage
ID = 100 A, VG1S = 0 , VG2S = 0 V(BR)DS
Symbol min. 12 6 6 -
Values typ. 13 1 max. 15 15 50 50 100 -
Unit
V
Gate1-source breakdown voltage +IG1S = 10 mA, V G2S = 0 , VDS = 0 Gate2 source breakdown voltage
IG2S = 10 mA, VG1S = 0 , V DS = 0
+V(BR)G1SS
V (BR)G2SS
Gate1-source leakage current
VG1S = 6 V, VG2S = 0
+IG1SS
IG2SS
A nA A mA V
Gate 2 source leakage current
V G2S = 6 V, VG1S = 0 , V DS = 0
Drain current
VDS = 5 V, VG1S = 0 , VG2S = 4 V
IDSS IDSO VG2S(p)
Operating current (selfbiased)
VDS = 5 V, VG2S = 4 V
Gate2-source pinch-off voltage
VDS = 5 V, I D = 100 A
2
Feb-27-2004
BG3230_BG3230R
Electrical Characteristics Parameter Symbol min. AC Characteristics - (verified by random sampling) Forward transconductance
VDS = 5 V, V G2S = 4 V g fs Cg1ss Cdss Gp
Values typ. 33 1.9 1.1 max. -
Unit
-
mS pF
Gate1 input capacitance
VDS = 5 V, V G2S = 4 V, f = 1 MHz
Output capacitance
VDS = 5 V, V G2S = 4 V, f = 100 MHz
Power gain (self biased)
VDS = 5 V, V G2S = 4 V, f = 800 MHz VDS = 5 V, V G2S = 4 V, f = 45 MHz
dB 24 31 1.3 1.7 dB 90 96 87 100 -
Noise figure (self biased)
VDS = 5 V, V G2S = 4 V, f = 800 MHz VDS = 5 V, V G2S = 4 V, f = 45 MHz
F
Gain control range
VDS = 5 V, V G2S = 4...0 V, f = 800 MHz
G p
45
Cross-modulation k=1%, fw=50MHz, funw=60MHz Xmod
AGC = 0 dB AGC = 10 dB AGC = 40 dB
3
Feb-27-2004
BG3230_BG3230R
Total power dissipation Ptot = (TS) Output characteristics ID = (V DS)
300
14 mA 12 11 10
2V
mW
P tot
200
ID
9 8
1.9V
150
7 6
1.8V
100
5 4 3
1.7V
50
2 1
1.6V
0 0
20
40
60
80
100
120 C
150
0 0
1
2
3
4
5
6
7
8
V
10
TS
VDS
Gate 1 forward transconductance
g fs = (ID) VDS = 5V, VG2S = Parameter
35
mS 4V
Drain current ID = (V G1S) VDS = 5V
VG2S = Parameter
26 mA
4V
22 20
3.5V
25
18
gfs
ID
16 14 12 10
3V
20
3.5V
15
3V
2.5V
10
8 6
5
4 2
2V
0 0
4
8
12
16
20
mA
26
0 0
0.4
0.8
1.2
1.6
2
V
2.8
ID
VG1S
4
Feb-27-2004
BG3230_BG3230R
AGC characteristic AGC = (VG2S)
f = 200 MHz
0
dB
AGC characteristic AGC = (V G2S) f = 800 MHz
0 dB -10
-20 -30 -40 -50 -60 -70 -80 -90 0
-15 -20
AGC
AGC
V
-25 -30 -35 -40 -45 -50 -55 -60
0.5
1
1.5
2
2.5
3
4
-65 0
0.5
1
1.5
2
2.5
3
V
4
VG2
VG2
Crossmodulation Vunw = (AGC)
VDS = 5 V, Rg1 = 68 k
120
dBV
Vunw
100 90 80 0
10
20
30
dB
50
AGC
5
Feb-27-2004
BG3230_BG3230R
Cossmodulation test circuit
VAGC
VDS 4n7
R1 10 kOhm 4n7
2.2 H
4n7
RL 50 Ohm 4n7 RGEN 50 Ohm RG1
50 Ohm
VGG
6
Feb-27-2004

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